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TMS28F200FT80BDBJE Datasheet(PDF) 3 Page - Texas Instruments |
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TMS28F200FT80BDBJE Datasheet(HTML) 3 Page - Texas Instruments |
3 / 79 page TMS28F002Axy, TMS28F200Axy 262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS826D – JANUARY 1996 – REVISED SEPTEMBER 1997 3 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 description 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . device symbol nomenclature 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . functional block diagram 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . architecture 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . block-memory maps 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . boot-block data protection 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . parameter block 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . main block 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . data protection 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . command-state machine (CSM) 8 . . . . . . . . . . . . . . . . . . . . . . . . . operation 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . command definition 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . status register 10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . byte-wide or word-wide mode selection 11 . . . . . . . . . . . . . . . . . . command-state-machine operations 13 . . . . . . . . . . . . . . . . . . . . clear status register 13 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . read operations 13 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . programming operations 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . erase operations 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . automatic power-saving mode 15 . . . . . . . . . . . . . . . . . . . . . . . . . . reset / deep power-down mode 15 . . . . . . . . . . . . . . . . . . . . . . . . . power supply detection 15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . common electrical parameter 20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . absolute maximum ratings 20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . capacitance 21 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TMS28F002ASy and TMS28F200ASy 22 . . . . . . . . . . . . . . . . . . . . . . TMS28F002AEy and TMS28F200AEy 32 . . . . . . . . . . . . . . . . . . . . . . TMS28F002AMy and TMS28F200AMy 42 . . . . . . . . . . . . . . . . . . . . . TMS28F002AFy and TMS28F200AFy 50 . . . . . . . . . . . . . . . . . . . . . . TMS28F002AZy and TMS28F200AZy 60 . . . . . . . . . . . . . . . . . . . . . . Parameter Measurement Information 70 . . . . . . . . . . . . . . . . . . . . . . . mechanical data NO TAG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table of Contents description The TMS28F200Axy is a 262 144 by 8-bit / 131 072 by-16 bit (2 097 152-bit), boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F200Axy is organized in a blocked architecture consisting of: D One 16K-byte protected boot block D Two 8K-byte parameter blocks D One 96K-byte main block D One 128K-byte main block The device can be ordered in five different voltage configurations (see Table 1). Operation as a 256K-byte (8-bit) or a 128K-word (16-bit) organization is user-definable. The TMS28F002Axy is offered in a 256K-byte organization only. The operation for this device is the same as the TMS28F200Axy and is offered in the same voltage configurations. TMS28F002Axy can be substituted for the byte-wide TMS28F200Axy, with the latter being the generic name for this device family. Embedded program and block-erase functions are fully automated by the on-chip write-state machine (WSM), thereby simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status can be monitored by an on-chip status register to determine the progress of program / erase tasks. The device features user-selectable block-erasure. The configurations are as follow: D The TMS28F002ASy and the TMS28F200ASy configurations have the auto-select feature that allows alternative read and program / erase voltages. Memory reads can be performed using 3.3-V VCC for optimum power consumption or at 5-V VCC, for device performance. Erasing or programming the device can be accomplished with 5-V VPP, which eliminates having to use a 12-V source and/or in-system voltage converters. Alternatively, 12-V VPP operation exists for systems that already have a 12-V power supply, which provides faster programming and erasing times. These configurations are offered in two different temperature ranges: 0 °C to 70°C and – 40°C to 85°C. D The TMS28F002AEy and the TMS28F200AEy configurations offer the auto-select feature of the TMS28F200ASy with an extended VCC to a low 2.7-V to 3.6-V range (3-V nominal). Memory reads can be performed using a 3-V VCC, allowing for more efficient power consumption than the ’ASy device. |
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