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HMC137 Datasheet(PDF) 1 Page - Hittite Microwave Corporation

Part # HMC137
Description  GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz
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Manufacturer  HITTITE [Hittite Microwave Corporation]
Direct Link  http://www.hittite.com
Logo HITTITE - Hittite Microwave Corporation

HMC137 Datasheet(HTML) 1 Page - Hittite Microwave Corporation

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC137
GaAs MMIC BI-PHASE
MODULATOR, 6 - 11 GHz
v03.0304
General Description
Features
Functional Diagram
Chip Integrates Directly into MIC Designs
Carrier Suppression: 20 dB
Direct Modulation in the 6 - 11 GHz Band
Functions also as a Phase Detector
Die Size: 1.45 x 1.30 x 0.1 mm
Electrical Specifications, T
A = +25° C, 5 mA Bias Current
Typical Applications
The HMC137 is suitable for:
• Wireless Local Loop
• LMDS & VSAT
• Point-to-Point Radios
• Test Equipment
The HMC137 Bi-Phase Modulator is designed to
phase-modulate an RF signal into reference and 180
degree states. Device input is at the RF port and out-
put is at the LO port. The polarity of the bias current
at the control port (IF port) defines the phase states.
Excellent amplitude and phase balance provided by
closely matched monolithic balun and diode circuits
delivers 20 dB of carrier suppression in a tiny mono-
lithic chip.
The device also functions as a demodulator or phase
comparator. As a demodulator, data emerges at the
control port when a modulated signal at the RF port
is compared to a reference signal at the LO port. As a
phase comparator, the phase angle between two sig-
nals applied to the RF and LO ports is represented
by an analog voltage at the control port. Except for
carrier suppression, the data presented here was
measured under static conditions in which a DC bias
current (nominally 5 mA) is applied to the control port.
Parameter
Min.
Typ.
Max.
Units
Frequency Band
6 - 11
GHz
Insertion Loss
911
dB
Return Loss, RF and LO Ports
2.5
3.0
dB
Amplitude Balance
0.25
0.50
dB
Phase Balacne
10
15
deg
Carrier Suppression (When driven with a 1 MHz square wave, 1.4 Vp-p)
15
20
dBc
Input Power for 1 dB Compression
4
8
dBm
Third Order Intercept, Input
10
15
dBm
Second Order Intercept, Input
25
40
dBm
Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V at
the control port).
25
10
mA


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