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27291SL Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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27291SL Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 15 page MRFE6S9045NR1 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with fre- quencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. • Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 350 mA, Pout = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 22.1 dB Drain Efficiency — 32% ACPR @ 750 kHz Offset — -46 dBc in 30 kHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (920-960 MHz) Power Gain — 20 dB Drain Efficiency — 46% Spectral Regrowth @ 400 kHz Offset = -62 dBc Spectral Regrowth @ 600 kHz Offset = -78 dBc EVM — 1.5% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts, Full Frequency Band (920-960 MHz) Power Gain — 20 dB Drain Efficiency — 68% Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS - 0.5, +66 Vdc Gate-Source Voltage VGS - 0.5, +12 Vdc Maximum Operation Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 81°C, 45 W CW Case Temperature 79°C, 10 W CW RθJC 1.0 1.1 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Document Number: MRFE6S9045N Rev. 0, 10/2007 Freescale Semiconductor Technical Data 880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 1265-09, STYLE 1 TO-270-2 PLASTIC MRFE6S9045NR1 © Freescale Semiconductor, Inc., 2007. All rights reserved. |
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