GT50J122 datasheet(2/6 Pages) TOSHIBA

Part #	GT50J122

Description	Current Resonance Inverter Switching Application

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

GT50J122

2006-11-01

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGES

VGE = ±25 V, VCE = 0

―

±500

nA

Collector cut-off current

ICES

VCE = 600 V, VGE = 0

―

1.0

mA

Gate-emitter cut-off voltage

VGE (OFF)

IC = 60 mA, VCE = 5 V

3.0

―

6.0

V

Collector-emitter saturation voltage

VCE (sat)

IC = 60 A, VGE = 15 V

―

1.9

2.5

V

Input capacitance

Cies

VCE = 10 V, VGE = 0, f = 1 MHz

―

4800

―

pF

Rise time

tr

―

0.17

―

Turn-on time

ton

―

0.23

―

Fall time

tf

―

0.16

0.26

Switching time

Turn-off time

toff

Resistive Load

VCC = 300 V, IC = 60 A

VGG = ±15 V, RG = 30 Ω

(Note 1)

―

0.41

―

μs

Note 1: Switching time measurement circuit and input/output waveforms

10%

90%

VGE

VCE

IC

td (off)

toff

tr

ton

0

tf

10%

90%

RG

VCC

RL

0

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