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74V1G125S Datasheet(PDF) 4 Page - STMicroelectronics |
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74V1G125S Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 8 page CAPACITIVE CHARACTERISTICS Symb ol Parameter Test Co nditi ons Valu e Un it TA =25 oC -40 to 85 oC Min. T yp. Max. Mi n. Max. CIN Input Capacitance 4 pF COUT Output Capacitance 6 10 10 pF CPD Power Dissipation Capacitance (note 1) 14 pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN +ICC TEST CIRCUIT T EST SW IT CH tPLH,tPHL Open tPZL,tPLZ VCC tPZH,tPHZ GND CL = 15/50 pF or equivalent (includes jig and probe capacitance) RL =R1 =1K Ω orequivalent RT =ZOUT of pulse generator (typically 50 Ω) 74V1G125 4/8 |
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