1

Item

Symbol

Rating

Unit

Drain-source voltage

-60

-60

Continuous drain current

-5

Pulsed drain current

-20

Gate-source voltage

±20

Max. power dissipation

20

Operating and storage

+150

temperature range

2SJ314-01L,S

FUJI POWER MOSFET

P-CHANNEL SILICON POWER MOSFET

Equivalent circuit schematic

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

V

A

A

A

V

W

°C

°C

-55 to +150

FAP-III SERIES

Thermal characteristics

Item

Symbol

Zero gate voltage drain current

Min.

Typ.

Max.

Units

V

V

μA

mA

nA

m

Ω

m

Ω

S

pF

ns

A

A

A

V

ns

μC

Min.

Typ.

Max.

Units

Thermal resistance

6.25

125.0

°C/W

°C/W

Symbol

Item

Drain-source breakdown voltage

Gate threshold voltage

Gate-source leakage current

Drain-source on-state resistance

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer capacitance

Avalanche capability

Continuous reverse drain current

Pulsed reverse drain current

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

Test Conditions

f=1MHz

Ω

L=100μH

-di/dt=100A/

-60

-1.0

-1.5

-2.5

-10

-500

-0.2

-1.0

10

100

280

480

200

300

2.0

4.5

500

750

200

300

120

180

15

23

20

30

100

150

80

120

-5

-5

-20

-4.0

80

0.18

Gate(G)

Source(S)

Drain(D)

Outline Drawings

Features

High speed switching

Low on-resistance

No secondary breakdown

Low driving power

High forward Transconductance

Avalanche-proof

Applications

Switching regulators

DC-DC converters

General purpose power amplifier

K-Pack(L)

K-Pack(S)

L-type

EIAJ