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AO4407A Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO4407A Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 4 page  AO4407A Symbol Min Typ Max Units BVDSS -30 V -10 TJ = 55°C -50 IGSS ±100 nA VGS(th) -1.7 -2.3 -3 V ID(ON) -60 A 8.5 11 TJ=125°C 11.5 15 10 13 27 38 gFS 21 S VSD -0.7 -1 V IS -3 A Ciss 2060 2600 pF Coss 370 pF Crss 295 pF Rg 2.4 3.6 Ω Qg 30 39 nC Qgs 4.6 nC Qgd 10 nC tD(on) 11 ns tr 9.4 ns tD(off) 24 ns tf 12 ns trr 30 40 ns Qrr 22 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. VGS=0V, VDS=-15V, f=1MHz Input Capacitance Output Capacitance Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω Turn-Off Fall Time Turn-On DelayTime m Ω SWITCHING PARAMETERS Gate Source Charge Gate Drain Charge Total Gate Charge VGS=-10V, VDS=-15V, ID=-12A DYNAMIC PARAMETERS Maximum Body-Diode Continuous Current Gate resistance VGS=0V, VDS=0V, f=1MHz VGS = -5V, ID = -10A IS = -1A,VGS = 0V VDS = -5V, ID = -10A VGS = -10V, ID = -12A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS µA Gate Threshold Voltage VDS = VGS ID = -250µA VDS = -30V, VGS = 0V VDS = 0V, VGS = ±25V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID = -250µA, VGS = 0V VGS = -10V, VDS = -5V VGS = -20V, ID = -12A Reverse Transfer Capacitance IF=-12A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C. Rev3: Jan 2008 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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