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74LVQ00 Datasheet(PDF) 4 Page - STMicroelectronics

Part No. 74LVQ00
Description  QUAD 2-INPUT NAND GATE
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
Test Co nditi ons
Valu e
Un it
VCC
(V)
TA =25
oC
-40 to 85
oC
Min.
T yp.
Max.
Mi n.
Max.
CIN
Input Capacitance
3.3
4
pF
CPD
Power Dissipation
Capacitance (note 1)
3.3
fIN = 10 MHz
22
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operting current can be obtained by the following equation. ICC(opr) = CPD
• VCC • fIN +ICC/4(per gate)
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500
Ω, Input tr =tf =3 ns)
Symb ol
Parameter
T est Con ditio n
Valu e
Un it
VCC
(V)
TA =25
oC
-40 to 85
oC
Min.
T yp.
Max.
Mi n.
Max.
tPLH
tPHL
Propagation Delay Time
2.7
6.0
11.0
12.0
ns
3.3
(*)
5.5
8.0
9.0
tOSLH
tOSHL
Output to Output Skew
Time (note 1, 2)
2.7
0.5
1.0
1.0
ns
3.3
(*)
0.5
1.0
1.0
1) Skew is defined as the absolute value of the difference between the actual propagation delay for any twooutputs of the same device switching in the
same direction, either HIGH or LOW (tOSLH =|tPLHm -tPLHn|, tOSHL =|tPHLm -tpHLn|)
2) Parameter guaranteed by design
(*) Voltage range is 3.3V
± 0.3V
74LVQ00
4/8




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