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TSM2N7000 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM2N7000 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 4 page TSM2N7000 60V N-Channel MOSFET 2/4 Version: A07 Electrical Specifications (Ta = 25oC, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 10µA BVDSS 60 -- -- V Gate Threshold Voltage VDS = VGS, ID = 1mA VGS(TH) 0.8 -- 3.0 V Gate Body Leakage VGS = ±15V, VDS = 0V IGSS -- -- ±10 nA Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V IDSS -- -- 1.0 µA VGS = 10V, ID = 500mA -- -- 5.0 Drain-Source On-State Resistance VGS = 5V, ID = 50mA RDS(ON) -- 7.5 -- Ω Forward Transconductance VDS = 15V, ID = 300mA gfs -- 320 -- mS Diode Forward Voltage IS = 200mA, VGS = 0V VSD -- 1.3 1.5 V Dynamic b Input Capacitance Ciss -- 60 -- Output Capacitance Coss -- 25 -- Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Crss -- 5 -- pF Switching c Turn-On Rise Time tr -- 10 -- Turn-Off Fall Time VDD = 15V, RL = 30Ω, ID = 500mA, VGEN = 10V, RG = 25Ω tf -- 10 -- nS Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. |
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