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TSD2118CP Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSD2118CP Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page TSD2118 Low Vcesat NPN Transistor 1/4 Version: A07 TO-252 (DPAK) PRODUCT SUMMARY BVCBO 50V BVCEO 20V IC 5A VCE(SAT) 1V @ IC / IB = 4A / 100mA Features ● Low VCE(SAT) -0.35 @ IC / IB = 4A / 100mA (Typ.) ● Complementary part with TSB1412 Structure ● Epitaxial Planar Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TSD2118CP RO TO-252 2.5Kpcs / 13” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6 V DC 5 Collector Current Pulse IC 10 (note 1) A Ta=25ºC 1 (note 2) Collector Power Dissipation Tc=25ºC PD 10 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw≤380us, Duty≤2% 2. When mounted on a 40 x 40 x 0.7mm ceramic board. Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 50uA, IE = 0 BVCBO 50 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 20 -- -- V Emitter-Base Breakdown Voltage IE = 50uA, IC = 0 BVEBO 6 -- -- V Collector Cutoff Current VCB = 40V, IE = 0 ICBO -- -- 0.5 uA Emitter Cutoff Current VEB = 5V, IC = 0 IEBO -- -- 0.5 uA Collector-Emitter Saturation Voltage IC / IB = 4A / 100mA *VCE(SAT) -- 0.35 1 V DC Current Transfer Ratio VCE = 2V, IC = 500mA *hFE 120 -- 560 Transition Frequency VCE =6V, IC=50mA, f=100MHz fT -- 150 -- MHz Output Capacitance VCB = 20V, f=1MHz Cob -- 35 -- pF * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% Pin Definition: 1. Base 2. Collector 3. Emitter |
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