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AAT4282AIPS-3-T1 Datasheet(PDF) 10 Page - Advanced Analogic Technologies |
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AAT4282AIPS-3-T1 Datasheet(HTML) 10 Page - Advanced Analogic Technologies |
10 / 14 page AAT4282A Dual Slew Rate Controlled Load Switch 10 4282A.2007.09.1.1 the internal parasitic diode and allow excessive current flow into the VOUT pin, possibly damaging the load switch. In applications where there is a possibility of V OUT exceeding VIN for brief periods of time during normal operation, the use of a larger value C IN capacitor is highly recommended. A larg- er value of C IN with respect to COUT will effect a slower C IN decay rate during shutdown, thus pre- venting V OUT from exceeding VIN. In applications where there is a greater danger of V OUT exceeding V IN for extended periods of time, it is recommend- ed to place a Schottky diode from V IN to VOUT (con- necting the cathode to V IN and anode to VOUT). The Schottky diode forward voltage should be less than 0.45V. Thermal Considerations and High Output Current Applications The AAT4282A is designed to deliver a continuous output load current. The limiting characteristic for maximum safe operating output load current is package power dissipation. In order to obtain high operating currents, careful device layout and circuit operating conditions must be taken into account. The following discussions will assume the load switch is mounted on a printed circuit board utilizing the minimum recommended footprint as stated in the Printed Circuit Board Layout Recommendations section of this datasheet. At any given ambient temperature (T A), the maxi- mum package power dissipation can be deter- mined by the following equation: Constants for the AAT4282A are maximum junction temperature (T J(MAX) = 125°C) and package ther- mal resistance ( θ JA = 70°C/W). Worst case condi- tions are calculated at the maximum operating tem- perature, T A = 85°C. Typical conditions are calcu- lated under normal ambient conditions where T A = 25°C. At T A = 85°C, PD(MAX) = 571mW. At TA = 25°C, P D(MAX) = 1429mW. The maximum continuous output current for the AAT4282A is a function of the package power dis- sipation and the R DS of the MOSFET at TJ(MAX). The maximum RDS of the MOSFET at T J(MAX) is calcu- lated by increasing the maximum room tempera- ture R DS by the RDS temperature coefficient. The temperature coefficient (TC) is 2800ppm/°C. Therefore, at 125°C: R DS(MAX) = RDS(25°C) · (1 + TC · ΔT)Ω R DS(MAX) = 130mΩ · + 0.002800 · (125°C - 25°C)) R DS(MAX) = 166.4mΩ For maximum current, refer to the following equation: For example, if V IN = 5V, RDS(MAX) = 166.4mΩ, and T A = 25°C, IOUT(MAX) = 2.93A. If the output load cur- rent were to exceed 2.93A or if the ambient tem- perature were to increase, the internal die temper- ature would increase and the device would be damaged. Higher peak currents can be obtained with the AAT4282A. To accomplish this, the device thermal resistance must be reduced by increasing the heat sink area or by operating the load switch in a duty cycle manner. Duty cycles with peaks less than 2ms in duration can be considered using the method described in the High Peak Current Applications section of this datasheet. IOUT(MAX) PD(MAX) RDS < PD(MAX) TJ(MAX) - TA θJA = 1 The actual maximum junction temperature of AAT4282A is 150°C. However, good designed practice is to derate the maximum die tem- perature down to 125 °C to prevent the possibility of over-temperature damage. |
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