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2N5415S Datasheet(PDF) 1 Page - STMicroelectronics |
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2N5415S Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 4 page 2N5415S October 1988 HIGH-VOLTAGE AMPLIFIER The 2N5415S is a silicon planar epitaxial PNP tran- sistor in Jedec TO-39 metal case, intended for high vol-tage switching and linear amplifier applications. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE = 0) – 200 V VCEO Collector-emitter Voltage (IB = 0) – 200 V VEBO Emitter-base Voltage (I C =0) – 4 V I CM Collector Peak Current – 1 A Pto t Total Power Dissipation at T amb ≤ 25 °C at T case ≤ 25 °C 1 10 W W T st g,Tj Storage and Junction Temperature – 55 to 200 °C DESCRIPTION INTERNAL SCHEMATIC DIAGRAM TO-39 1/4 |
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