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UPA2791GR-E1-AT Datasheet(PDF) 9 Page - NEC

Part # UPA2791GR-E1-AT
Description  MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

UPA2791GR-E1-AT Datasheet(HTML) 9 Page - NEC

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Data Sheet G18207EJ2V0DS
9
μPA2791GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
0
-5
-10
-15
-20
-25
0
-0.5
-1
-1.5
-2
-2.5
-3
VGS =
−10 V
−4.5 V
Pulsed
VDS - Drain to Source Voltage - V
-0.0001
-0.001
-0.01
-0.1
-1
-10
-100
0
-1
-2-3-4
VDS =
−10 V
Pulsed
TA = 150
°C
75
°C
25
°C
−25°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
-0.5
-1
-1.5
-2
-2.5
-50
0
50
100
150
VDS =
−10 V
ID =
−1 mA
Tch - Channel Temperature -
°C
0.001
0.01
0.1
1
10
VDS =
−10 V
Pulsed
TA = 150
°C
−25°C
25
°C
75
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
20
40
60
80
100
120
140
160
-1
-10
-100
VGS =
−4.5 V
−10 V
Pulsed
ID - Drain Current - A
0
20
40
60
80
100
120
140
160
0
-5
-10
-15
-20
ID =
−3.0 A
Pulsed
VGS - Gate to Source Voltage - V
-100
μ
-1 m
-10 m -100 m
-1
-10


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