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TSM3900DCX6RF Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM3900DCX6RF Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 6 page TSM3900D 20V Dual N-Channel MOSFET 1/6 Version: A07 SOT-26 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM3900DCX6 RF SOT-26 T&R Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID 2 A Pulsed Drain Current IDM 8 A Continuous Source Current (Diode Conduction) a,b IS 1.6 A Ta = 25 oC 2.0 Maximum Power Dissipation Ta = 70 oC PD 1.3 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to CaseThermal Resistance RӨJC 30 oC/W Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 80 oC/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) ID (A) 55 @ VGS = 4.5V 2.0 70 @ VGS = 2.5V 1.5 20 110 @ VGS = 1.8V 1.0 Block Diagram Dual N-Channel MOSFET Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 |
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