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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR NP84N075EUE, NP84N075KUE NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D14675EJ4V0DS00 (4th edition) Date Published October 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2002, 2007 DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE NP84N075EUE-E1-AY Note1, 2 NP84N075EUE-E2-AY Note1, 2 TO-263 (MP-25ZJ) typ. 1.4 g NP84N075KUE-E1-AY Note1 NP84N075KUE-E2-AY Note1 Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP84N075CUE-S12-AZ Note1, 2 Sn-Ag-Cu TO-220 (MP-25) typ. 1.9 g NP84N075DUE-S12-AY Note1, 2 TO-262 (MP-25 Fin Cut) typ. 1.8 g NP84N075MUE-S18-AY Note1 TO-220 (MP-25K) typ. 1.9 g NP84N075NUE-S18-AY Note1 Pure Sn (Tin) Tube 50 p/tube TO-262 (MP-25SK) typ. 1.8 g Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 12.5 m Ω MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 5600 pF TYP. (TO-220) (TO-262) (TO-263) <R> |
