Data Sheet D14099EJ6V0DS

3

NP84N055EHE, NP84N055KHE, NP84N055CHE, NP84N055DHE, NP84N055MHE, NP84N055NHE

°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

10

Gate Leakage Current

±10

Gate to Source Threshold Voltage

2.0

3

4.0

V

Forward Transfer Admittance

20

44

S

Drain to Source On-state Resistance

5.8

7.3

m

Ω

Input Capacitance

4540

6810

pF

Output Capacitance

710

1070

pF

Reverse Transfer Capacitance

f = 1 MHz

340

620

pF

Turn-on Delay Time

37

81

ns

Rise Time

22

54

ns

Turn-off Delay Time

Ω

76

150

ns

Fall Time

22

56

ns

Total Gate Charge

88

130

nC

Gate to Source Charge

22

nC

Gate to Drain Charge

31

nC

Body Diode Forward Voltage

1.0

V

Reverse Recovery Time

49

ns

Reverse Recovery Charge

di/dt = 100 A/

78

nC

TEST CIRCUIT 3 GATE CHARGE

PG.

Ω

50

Ω

D.U.T.

L

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.

TEST CIRCUIT 2 SWITCHING TIME

PG.

50

Ω

D.U.T.

0

τ = 1 μs

Duty Cycle

τ

Wave Form

Wave Form

10%

0

0

90%

90%

90%

10%

10%