Part Name
         Description
NP36P06SLG

 MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET ( 7 Page)


NEC
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Data Sheet D18008EJ5V0DS
4
NP36P06SLG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
0
-50
-100
-150
0
-2-4-6-8
-10
VGS =
−10 V
Pulsed
−4.5 V
VDS - Drain to Source Voltage - V
-0.001
-0.01
-0.1
-1
-10
-100
-1000
0
-1-2
-3-4
-5
VDS =
−10 V
Pulsed
TA =
−55°C
25
°C
125
°C
175
°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
-0.5
-1
-1.5
-2
-2.5
-3
-100
-50
0
50
100
150
200
VDS =
−10 V
ID =
−1 mA
Tch - Channel Temperature -
°C
0.1
1
10
100
-0.1
-1
-10
-100
VDS =
−10 V
Pulsed
TA =
−55°C
25
°C
125
°C
175
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
50
60
70
80
-1
-10
-100
-1000
Pulsed
−10 V
VGS =
−4.5 V
ID - Drain Current - A
0
10
20
30
40
50
0
-5
-10
-15
-20
ID =
−18 A
Pulsed
VGS - Gate to Source Voltage - V



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