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TLP180_07 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TLP180_07
Description  Photocoupler GaAs Ired & Photo−Transistor
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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 3 page
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TLP180
2007-10-01
3
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = ±10 mA
1.0
1.15
1.3
V
Capacitance
CT
V = 0, f = 1 MHz
60
pF
Collector
−emitter
breakdown voltage
V(BR) CEO
IC = 0.5 mA
80
V
Emitter
−collector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
7
V
VCE = 48 V (ambient light
below 1000Lx)
(Note3)
0.01
(2)
0.1
(10)
μA
Collector dark current
ICEO
VCE = 48 V (ambient light
Ta = 85°C
below 1000Lx)
(Note3)
2
(4)
50
(50)
μA
Capacitance
(collector to emitter)
CCE
V = 0, f = 1 MHz
10
pF
Note 3: Please use standard electric lamp to light up the device's marking surface.
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
MIn.
Typ.
Max.
Unit
50
600
Current transfer ratio
IC / IF
IF = ±5 mA, VCE = 5 V
Rank GB
100
600
%
60
Saturated CTR
IC / IF (sat)
IF = ±1 mA, VCE = 0.4 V
Rank GB
30
%
IC = 2.4 mA, IF = ±8 mA
0.4
0.2
Collector
−emitter
saturation voltage
VCE (sat)
IC = 0.2 mA, IF = ±1 mA
Rank GB
0.4
V
Off
−state collector current
IC(off)
VF = ± 0.7V, VCE = 48 V
1
10
μA
CTR symmetry
IC (ratio)
IC (IF = −5mA) / IC (IF = 5mA)
(Note4)
0.33
1
3
Note 4 : IC(ratio)=
5V)
CE
V
,
F1
I
F
(I
C1
I
5V)
CE
V
,
F2
I
F
(I
C2
I
=
=
=
=
IC1
IC2
VCE
IF1
IF2




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