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2SK4178-S27-AY Datasheet(PDF) 2 Page - NEC |
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2SK4178-S27-AY Datasheet(HTML) 2 Page - NEC |
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2 / 8 page  Data Sheet D19080EJ1V0DS 2 2SK4178 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 V Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 12 A 7 15 S RDS(on)1 VGS = 10 V, ID = 30 A 6.8 9.0 m Ω Drain to Source On-state Resistance Note RDS(on)2 VGS = 4.5 V, ID = 12 A 9.8 15 m Ω Input Capacitance Ciss VDS = 10 V, 1500 pF Output Capacitance Coss VGS = 0 V, 360 pF Reverse Transfer Capacitance Crss f = 1 MHz 126 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 30 A, 9 ns Rise Time tr VGS = 10 V, 9.7 ns Turn-off Delay Time td(off) RG = 3 Ω 32 ns Fall Time tf 7.7 ns QG1 VDD = 15 V, VGS = 10 V, ID = 30 A 24 nC Total Gate Charge QG2 VDD = 15 V, VGS = 4.5 V, ID = 30 A 11.5 nC Gate to Source Charge QGS 3.7 nC Gate to Drain Charge QGD VDD = 15 V, ID = 30 A 3.7 nC Gate Resistance RG 1.2 Ω Body Diode Forward Voltage Note VF(S-D) IF = 30 A, VGS = 0 V 0.87 1.5 V Reverse Recovery Time trr IF = 30 A, VGS = 0 V, 29 ns Reverse Recovery Charge Qrr di/dt = 100 A/ μs 23 nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY RG = 25 Ω 50 Ω PG. L VDD VGS = 20 → 0 V BVDSS IAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. RG 0 VGS D.U.T. RL VDD τ = 1 s μ Duty Cycle ≤ 1% τ PG. 50 Ω D.U.T. RL VDD IG = 2 mA VGS Wave Form VDS Wave Form VGS VDS 10% 0 0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% |
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