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2N2219 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. 2N2219
Description  HIGH-SPEED SWITCHES
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CBO
Collector Cutoff Current
(IE =0)
VCB =50 V
VCB =50 V
T amb =150
°C
10
10
nA
µA
I EBO
Emitter Cutoff Current
(IC =0)
VEB =3 V
10
nA
V(BR) CBO
Colllector-base Breakdown
Voltage (IE =0)
I C =10 µA60
V
V(BR)CE O *
Collector-emitter Breakdown
Voltage (IB =0)
I C =10 mA
30
V
V(BR) EBO
Emittter-base Breakdown
Voltage (IC =0)
I E =10
µA5
V
VCE (s at )*
Collector-emitter Saturation
Voltage
I C =150 mA
I C =500 mA
I B =15 mA
I B =50 mA
0.4
1.6
V
V
VB E (sat )*
Base-emitter Saturation
Voltage
I C =150 mA
I C =500 mA
I B =15 mA
I B =50 mA
1.3
2.6
V
V
h FE*
DC Current Gain
for 2N 221 8
I C = 0.1 mA
I C =1 mA
I C =10 mA
I C =150 mA
I C =500 mA
I C =150 mA
for 2N 221 9
I C = 0.1 mA
I C =1 mA
I C =10 mA
I C =150 mA
I C =500 mA
I C =150 mA
and 2N 22 21
VCE =10 V
VCE =10 V
VCE =10 V
VCE =10 V
VCE =10 V
VCE =1 V
and 2N 22 22
VCE =10 V
VCE =10 V
VCE =10 V
VCE =10 V
VCE =10 V
VCE =1 V
20
25
35
40
20
20
35
50
75
100
30
50
120
300
f T
Transition Frequency
I C =20 mA
f = 100 MHz
VCE = 20 V
250
MHz
C CBO
Collector-base Capacitance
I E =0
f = 100 kHz
VCB =10 V
8
pF
Re(hie)
Real Part of Input
Impedance
I C =20 mA
f = 300 MHz
VCE =20 V
60
* Pulsed : pulse duration = 300
µs, duty cycle = 1 %.
THERMAL DATA
2 N22 18
2 N22 19
2N 222 1
2N 222 2
Rth j-cas e
R th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
50
°C/W
187.5
°C/W
83.3
°C/W
300
°C/W
2N2218-2N2219-2N2221-2N2222
2/5




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