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NUF8000MUT2G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NUF8000MUT2G
Description  Low Capacitance 8 Line EMI Filter with ESD Protection in UDFN Package
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NUF8000MUT2G Datasheet(HTML) 2 Page - ON Semiconductor

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NUF8000MU
http://onsemi.com
2
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000-4-2
Contact Discharge
VPP
8.0
kV
Operating Temperature Range
TOP
-40 to 85
°C
Storage Temperature Range
TSTG
-55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
VRWM
5.0
V
Breakdown Voltage
VBR
IR = 1.0 mA
6.0
7.0
8.0
V
Leakage Current
IR
VRWM = 3.3 V
100
nA
Resistance
RA
IR = 20 mA
85
100
115
W
Capacitance (Notes 1 and 2)
Cd
15
20
pF
Cut-Off Frequency (Note 3)
f3dB
Above this frequency,
appreciable attenuation occurs
95
MHz
1. Measured at 25
°C, VR = 2.5 V, f = 1.0 MHz.
2. Total Line Capacitance is 2 times the Diode Capacitance (Cd).
3. 50
W source and 50 W load termination.


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