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2N2219A Datasheet(PDF) 2 Page - STMicroelectronics

Part No. 2N2219A
Description  HIGH SPEED SWITCHES
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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THERMAL DATA
TO-39
T O-18
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
50
187.5
83.3
300
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-of f
Current (IE =0)
VCB =60 V
VCB =60 V
Tcase = 150
oC
10
10
nA
µA
ICEX
Collector Cut-of f
Current (VBE =-3V)
VCE = 60 V
10
nA
IBEX
Base Cut -off Current
(VBE =-3V)
VCE = 60 V
20
nA
IEBO
Emitter Cut-of f Current
(IC =0)
VEB =3 V
10
nA
V(BR)CBO
∗ Collector-Base
Breakdown Voltage
(IE =0)
IC =10
µA75
V
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB =0)
IC =10 mA
40
V
V(BR)EBO
∗ Emitter-Base
Breakdown Voltage
(IC =0)
IE =10
µA6
V
VCE(sat)
∗ Collector-Emitter
Sat uration Voltage
IC = 150 mA
IB =15 mA
IC = 500 mA
IB =50 mA
0. 3
1
V
V
VBE(sat)
∗ Base-Emitter
Sat uration Voltage
IC = 150 mA
IB =15 mA
IC = 500 mA
IB =50 mA
0. 6
1. 2
2
V
V
hFE
DC Current G ain
IC =0.1 mA
VCE =10 V
IC =1 mA
VCE =10 V
IC =10 mA
VCE =10 V
IC = 150 mA
VCE =10 V
IC = 500 mA
VCE =10 V
IC = 150 mA
VCE =1 V
IC =10 mA
VCE =10 V
Tamb =-55
oC
35
50
75
100
40
50
35
300
hfe
SmallSignalCurrent
Gain
IC =1 mA
VCE =10 V
f = 1KHz
IC =10 mA
VCE =10 V
f = 1KHz
50
75
300
375
fT
Transition Frequency
IC =20 mA
VCE =20 V
f= 100 MHz
300
MHz
CEBO
Emitter Base
Capacitance
IC =0
VEB =0.5 V
f =100KHz
25
pF
CCBO
Collector Base
Capacitance
IE =0
VCB =10 V
f = 100 KHz
8
pF
Re (hie)
Real Part of Input
Impedance
IC =20 mA
VCE =20 V
f = 300MHz
60
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%
2N2219A/2N2222A
2/8




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