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2N2102 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. 2N2102
Description  EPITAXIAL PLANAR NPN
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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 2 page
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
30
150
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 60 V
VCB = 60 V
TC = 150
oC
2
2
nA
µA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
5
nA
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100
µA
120
V
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 30 mA
65
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
0.5
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
1.1
V
hFE
DC Current Gain
IC = 10
µA
VCE = 10 V
IC = 100
µA
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
IC = 500 mA
VCE = 10 V
IC = 1 A
VCE = 10 V
10
20
35
40
25
10
120
hfe
High Frequency
Current Gain
IC = 50 mA
VCE = 10 V
f = 20 MHz
6
NF
Noise Figure
IC = 300
µA VCE = 10 V f = 1 KHz
BW = 1 Hz
Rg = 510
8dB
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 1MHz
15
pF
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V
f = 1MHz
80
pF
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2N2102
2/4




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