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2N2102 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. 2N2102
Description  EPITAXIAL PLANAR NPN
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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2N2102
EPITAXIAL PLANAR NPN
s
GENERAL PURPOSE AMPLIFIER AND
SWITCH
DESCRIPTION
The 2N2102 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case. It is
intended for a wide variety of small-signall and
medium power
applications in military and
industrial equipments.
®
INTERNAL SCHEMATIC DIAGRAM
December 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
120
V
VCEO
Collector-Emitter Voltage (IB = 0)
65
V
VCER
Collector-Emitter Voltage (RBE
≤ 10Ω)
80
V
VEBO
Emitter-Base Voltage (IC = 0)
7
V
IC
Collector Current
1
A
Ptot
Total Dissipation at Tamb
≤ 25 oC
at TC
≤ 25 oC
1
5
W
W
Tstg
Storage Temperature
-65 to 175
oC
Tj
Max. Operating Junction Temperature
175
oC
TO-39
1/4




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