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STRH50P6FSY3 Datasheet(PDF) 5 Page - STMicroelectronics |
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STRH50P6FSY3 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 13 page STRH50P6FSY3 Electrical characteristics 5/13 2.2 Post-irradiation The ST rad-hard power MOSFETs are tested to verify the radiation capability. The technology is extremely resistant to assurance well functioning of the device inside the radiation environments. Every manufacturing lot is tested for total ionizing dose. (@Tj=25°C up to 100Krad (a)) Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 50 200 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 50 A, VGS = 0 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50 A, di/dt = 100 A/µs VDD= 20 V, Tj = 25°C 240 300 3.85 25.6 360 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50 A, di/dt = 100 A/µs VDD= 20 V, Tj = 150°C 300 376 5.64 30 451 ns µC A a. According to ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec. Table 9. On/off states Symbol Parameter Test conditions Min. Typ. Max Unit IDSS Zero gate voltage drain current (VGS = 0) 80% BVDss 10 µA IGSS Gate body leakage current (VDS = 0) VGS = ±18 V ± 100 nA V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS = 0 100 V VGS(th) Gate threshold voltage VDS =VGS, ID = 1 mA 2 4.5 V RDS(on) Static drain-source on resistance VGS = 12 V, ID = 25 A 0.047 0.053 Ω |
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