Electronic Components Datasheet Search
Selected language     English  ▼
Part Name
         Description


2N1893 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. 2N1893
Description  GENERAL PURPOSE HIGH-VOLTAGE TYPE
Download  5 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo 

   
 2 page
background image
ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CBO
Collector Cutoff Current
(IE =0)
VCB =90 V
VCB =90 V
T amb =150 °C
10
15
nA
µA
I EBO
Emitter Cutoff Current
(IC =0)
VEB =5 V
10
nA
V(BR) CBO
Collector-base Breakdown
Voltage (IE =0)
I C =100
µA
120
V
V(BR)CE R*
Collector-emitter Breakdown
Voltage (R BE
≤ 10 Ω)
I C = 10 mA
100
V
V(B R)CEO
Collector-emitter Breakdown
Voltage (IB =0)
I C =10 mA
80
V
V(BR) EBO
Emitter-base Breakdown
Voltage (IC =0)
I E =100 µA7
V
VCE (s at )*
Collector-emitter Saturation
Voltage
I C =50 mA
I C =150 mA
I B =5 mA
I B =15 mA
1.2
5
V
V
VBE (s at) *
Base-emitter Saturation
Voltage
I C =50 mA
I C =150 mA
I B =5 mA
I B =15 mA
0.82
0.96
0.9
1.3
V
V
h FE*
DC Current Gain
I C = 0.1 mA
I C =10 mA
I C =150 mA
I C =10 mA
T amb =– 55
°C
VCE =10 V
VCE =10 V
VCE =10 V
VCE =10 V
20
35
40
20
50
80
80
40
120
h fe
Small Signal Current Gain
I C =1 mA
f = 1 kHz
I C =5 mA
f = 1 kHz
VCE =5 V
VCE =10 V
30
45
70
85
150
f T
Transition Frequency
I C =50 mA
f= 20 MHz
VCE = 10 V
50
70
MHz
C EBO
Emitter-base Capacitance
I C =0
f = 1 MHz
VEB = 0.5 V
55
85
pF
C CBO
Collector-base Capacitance
I E =0
f = 1 MHz
VCB =10 V
13
15
pF
* Pulsed : pulse duration = 300
µs, duty cycle = 1 %.
THERMAL DATA
Rth j-cas e
R th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
58
219
°C/W
°C/W
2N1893
2/5




Html Pages

1  2  3  4  5 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
3BZ41RECTIFIER SILICON DIFFUSED TYPE GENERAL PURPOSE RECTIFIER APPLICATIONS 1 2 3 Toshiba Semiconductor
PC4N29VHIGH TRANSFER EFFICIENCY GENERAL PURPOSE TYPE PHOTOCOUPLER 1 2 3 4 Sharp Electrionic Components
KB817-BGENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES 1 2 3 4 5 MoreKingbright Corporation
3DZ41SILICON DIFFUSED TYPE GENERAL PURPOSE RECTFIER APPLICATIONS 1 2 3 Toshiba Semiconductor
KTX301EEPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE ULTRA HIGH SPEED SWITCHING 1 2 KEC(Korea Electronics)
LTV-4N28GENERAL PURPOSE TYPE PHOTOCOUPLER 1 2 3 4 5 Lite-On Technology Corporation
CRG01DIFFUSED TYPE GENERAL PURPOSE RECTIFIER APPLICATIONS 1 2 3 Toshiba Semiconductor
KTX301UEPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE ULTRA HIGH SPEED SWITCHING 1 2 KEC(Korea Electronics)
2SA1945FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE 1 2 3 Isahaya Electronics Corporation
PC714VHigh Isolation Voltage Type General Purpose Photocoupler 1 2 3 4 Sharp Electrionic Components

Link URL

Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Bookmark   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl