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2N1711 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. 2N1711
Description  SWITCHES AND UNIVERSAL AMPLIFIERS
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CBO
Collector Cutoff Current
(IE =0)
VCB =60 V
VCB =60 V
T amb =150
°C
10
10
nA
µA
I EBO
Emitter Cutoff Current
(IC =0)
VEB =5 V
for 2N 16 13
for 2N 17 11
10
5
nA
nA
V(BR) CBO
Collector-base Breakdown
Voltage
I C = 0.1 mA
75
V
V(BR)CE R*
Collector-emitter
Breakdown Voltage
(R BE
≤ 10 Ω)
I C =10 mA
50
V
V(BR) EBO
Emitter-base Breakdown
Voltage (IC =0)
I E = 0.1 mA
7
V
VCE (s at )*
Collector-emitter
Saturation Voltage
I C = 150 mA
I B = 15 mA
0.5
1.5
V
VBE (sat) *
Base-emitter Saturation
Voltage
I C = 150 mA
I B = 15 mA
0.95
1.3
V
h FE*
DC Current Gain
for 2 N16 13
I C = 0.01 mA
I C = 0.1 mA
I C =10 mA
I C =150 mA
I C =500 mA
I C =10 mA
T amb =–55
°C
VCE =10 V
VCE =10 V
VCE =10 V
VCE =10 V
VCE =10 V
VCE =10 V
20
35
40
20
20
35
50
80
80
55
35
120
h FE*
DC Current Gain
for 2 N17 11
I C = 0.01 mA
I C = 0.1 mA
I C =10 mA
I C =150 mA
I C =500 mA
I C =10 mA
T amb =55
°C
VCE =10 V
VCE =10 V
VCE =10 V
VCE =10 V
VCE =10 V
VCE =10 V
20
35
60
80
130
130
75
65
300
h fe
Small Signal Current Gain for 2 N16 13
I C =1 mA
f = 1 kHz
for 2 N17 11
I C =1 mA
f = 1 kHz
VCE =10 V
VCE =10 V
30
70
70
135
150
300
f t
Transition Frequency
I C =50 mA
f = 20 MHz
VCE =10 V
for 2N 16 13
for 2N 17 11
60
70
80
100
MHz
MHz
C EBO
Emitter-base Capacitance
I C =0
f= 1 MHz
VEB = 0.5 V
50
80
pF
C CBO
Collector-base
Capacitance
I E =0
f= 1 MHz
VCB =10 V
18
25
pF
* Pulsed : pulse duration = 300
µs, duty cycle = 1 %.
THERMAL DATA
Rth j-case
R th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
58
219
°C/W
°C/W
2N1613-2N1711
2/5




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