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2N1613 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. 2N1613
Description  SWITCHES AND UNIVERSAL AMPLIFIERS
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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2N1613
2N1711
January 1989
SWITCHES AND UNIVERSAL AMPLIFIERS
The 2N1613 and 2N1711 are silicon planar epitaxial
NPN transistors in Jedec TO-39 metal case. They
are designed for use in high-performance amplifier,
oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers
where low noise is an important factor.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
VCBO
Collector-base Voltage (IE =0)
75
V
VCER
Collector-emitter Voltage (RBE ≤ 10 Ω)50
V
VEBO
Emitter-base Voltage (I C =0)
7
V
I C
Collector Current
500
mA
Pto t
Total Power Dissipation at T amb
≤ 25 °C
at T cas e
≤ 25 °C
at T cas e ≤ 100 °C
0.8
3
1.7
W
W
W
Tstg,Tj
Storage and Junction Temperature
– 65 to 200
°C
Products approved to CECC 50002-104 avail-
able on request.
DESCRIPTION
TO-39
INTERNAL SCHEMATIC DIAGRAM
1/5




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