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TLN117F Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TLN117F Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page TLN117(F) 2007-10-01 1 TOSHIBA Infrared LED GaAs Infrared Emitter TLN117(F) Lead(Pb)-Free Opto−Electoronic Switches Floppy Disk Drives Optical Mice Optical Touch Sensors • Small−side−view epoxy−resin package • High radiant intensity: IE = 0.8mW / sr(min)at IF = 20mA • Half−angle value: θ1 / 2 = ±15°(typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Pulse forward current IFP 600 (Note 1) mA Forward current derating (Ta > 25°C) ΔIF / °C −0.33 mA / °C Reverse voltage VR 5 V Operating temperature Topr −25~85 °C Storage temperature Tstg −40~100 °C Soldering temperature (5s) Tsol 260 (Note 2) °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≦ 100μs, repetitive frequency =100Hz Note 2: Soldering must be performed 2mm from the bottom of the package body. Unit: mm TOSHIBA 4−3P1 Weight: 0.1 g (typ.) Pin Connection 1. Cathode 2. Anode 12 |
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