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TLN108F Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLN108F Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page TLN108(F) 2007-10-01 2 Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 50 mA ― 1.3 1.4 V Pulse forward voltage VFP IFP = 1 A ― 2.4 ― V Reverse current IR VR = 5 V ― ― 10 μA Radiant intensity IE IF = 50 mA 10 20 ― mW / sr Radiant power PO IF = 50 mA ― 3 ― mW Capacitance CT VR = 0, f = 1 MHz ― 30 ― pF Peak emission wavelength λP IF = 50 mA ― 940 ― nm Spectral line half width Δλ IF = 50 mA ― 50 ― nm Half value angle θ 2 1 IF = 50 mA ― ±8 ― ° Precautions Please be careful of the followings. 1. Soldering temperature: 260°C max Soldering time: 5s max (Soldering must be performed 1.5m from the bottom of the package.) 2. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1. (0) P (t) P (0) I (t) I O O E E = |
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