Electronic Components Datasheet Search |
|
TLOE53T Datasheet(PDF) 2 Page - Toshiba Semiconductor |
|
TLOE53T Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 12 page TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F) 2007-10-01 2 Absolute Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) Operating Temperature Topr (°C) Storage Temperature Tstg (°C) TLRE53T(F) 50 4 120 TLRME53T(F) 50 4 120 TLSE53T(F) 50 4 120 TLOE53T(F) 50 4 120 TLYE53T(F) 50 4 120 TLPYE53T(F) 50 4 120 TLGE53T(F) 50 4 120 TLFGE53T(F) 50 4 120 TLPGE53T(F) 50 4 120 −40~100 −40~120 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical and Optical Characteristics (Ta = 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product Name λd λP Δλ IF Min Typ. IF Typ. Max IF Max VR TLRE53T (F) 630 (644) 20 20 153 400 20 1.9 2.4 20 50 4 TLRME53T (F) 626 (636) 23 20 272 600 20 1.9 2.4 20 50 4 TLSE53T (F) 613 (623) 20 20 272 800 20 1.9 2.4 20 50 4 TLOE53T (F) 605 (612) 20 20 272 1000 20 2.0 2.4 20 50 4 TLYE53T (F) 587 (590) 17 20 272 800 20 2.0 2.4 20 50 4 TLPYE53T (F) 580 (583) 14 20 153 450 20 2.0 2.4 20 50 4 TLGE53T (F) 571 (574) 17 20 153 400 20 2.0 2.4 20 50 4 TLFGE53T (F) 565 (568) 15 20 85 200 20 2.0 2.4 20 50 4 TLPGE53T (F) 558 (562) 14 20 47.6 130 20 2.1 2.4 20 50 4 Unit nm mA mcd mA V mA μA V Precautions Please be careful of the following: • Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
Similar Part No. - TLOE53T |
|
Similar Description - TLOE53T |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |