2MBI150UB-120
IGBT Module
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=4.7Ω
Switching loss vs. Gate resistance (typ.)
+VGE=15V,-VGE <= 15V, RG >= 4.7Ω ,Tj <= 125°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=4.7Ω, Tj= 25°C
Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=4.7Ω, Tj=125°C
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C
Reverse bias safe operating area (max.)
10
100
1000
10000
0
100
200
300
Collector current : Ic [ A ]
ton
toff
tr
tf
10
100
1000
10000
0
100
200
300
Collector current : Ic [ A ]
toff
ton
tr
tf
10
100
1000
10000
1.0
10.0
100.0
Gate resistance : Rg [ Ω ]
tr
tf
toff
ton
0
5
10
15
20
25
30
0
100
200
300
Collector current : Ic [ A ]
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°C)
Err(25°C)
Eoff(25°C)
0
50
100
150
1.0
10.0
100.0
Gate resistance : Rg [ Ω ]
Eoff
Err
Eon
0
100
200
300
400
0
400
800
1200
Collector - Emitter voltage : VCE [ V ]
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
