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TCR5SB39 Datasheet(PDF) 11 Page - Toshiba Semiconductor |
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TCR5SB39 Datasheet(HTML) 11 Page - Toshiba Semiconductor |
11 / 17 page TCR5SB15~TCR5SB50 2007-11-01 11 6) Quiessrnt Current vs. Ambient temperature 7) Overcurrent Protection Characteristics Ambient temperature Ta (°C) TCR5SB30 −50 −25 0 25 100 75 50 0 100 200 VIN = 4 V, CIN = 0.1 μF, COUT = 1μF, IOUT = 150 mA 50 mA 0 mA Ambient temperature Ta (°C) TCR5SB15 −50 −25 0 25 100 75 50 0 100 200 VIN = 2.5 V, CIN = 0.1 μF, COUT = 1μF, IOUT = 150 mA 50 mA 0 mA Ambient temperature Ta (°C) TCR5SB50 −50 −25 0 25 100 75 50 0 100 200 VIN = 6 V, CIN = 0.1 μF, COUT = 1μF, IOUT = 150 mA 50 mA 0 mA Pulse width = 1 ms 0 2.0 2.5 0 100 400 600 VIN = 2.8 V 200 300 500 Output current IOUT (mA) TCR5SB18 1.5 1.0 0.5 VIN = 5.0 V VIN = 6.0 V Ambient temperature Ta (°C) TCR5SB18 −50 −25 0 25 100 75 50 0 100 200 VIN = 2.8 V, CIN = 0.1 μF, COUT = 1μF, 50 mA 0 mA IOUT = 150 mA |
Similar Part No. - TCR5SB39 |
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Similar Description - TCR5SB39 |
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