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IRG4PG40FD Datasheet(PDF) 7 Page - International Rectifier |
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IRG4PG40FD Datasheet(HTML) 7 Page - International Rectifier |
7 / 35 page The IGBT Structure IR G 4 B C 4 0 S D Diode International Rectifier Speed Designator IGBT S Standard Generation Modifier F Fast Voltage Designator Die Size M Short Cicuit Fast Package Designator C 600v E 800v U UltraFast B T0220 F 900v G 1000v K Short Circuit UltraFast P T0247 H 1200v Basic IGBT Structure The silicon cross-section of an Insulated Gate Bipolar Transistor (IGBT), the terminal called Collector is, actually, the Emitter of the PNP. In spite of its similarity to the cross-section of a power MOSFET, operating of the two transistors is fundamentally different, the IGBT being a minority carrier device. Except for the P + substrate is virtually identical to that of a power MOSFET, both devices share a similar polysilicon gate structure and P wells with N + source contacts. In both devices the N-type material under the P wells is sized in thickness and reistivity to sustain the full voltage rating of the device. However, in spite of the many similarities, he physical operation of the IGBT is closer to that of a bipolar transistor than to that of a power MOSFET. This is due to the P + substrate which is responsible for the minority carrier injection into the N regtion and the resulting conductivity modulation, a significant share of the conduction losses occur in the N region, typically 70% in a 500v device. The part number itself contains in coded form the key features of the IGBT. An explanation of the nomenclature in contained below. IGBT / CoPack Quarterly Reliability Report Page 7 of 35 |
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