TC7MZ245FK

2007-10-19

3

Characteristics

Symbol

Rating

Unit

Supply voltage range

V

DC input voltage (DIR, OE )

V

(Note 2)

DC bus I/O voltage

V

Input diode current

mA

Output diode current

(Note 4)

mA

DC output current

mA

Power dissipation

180

mW

mA

Storage temperature

°C

Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or

even destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 2: Output in off-state

Characteristics

Symbol

Rating

Unit

2.0~3.6

Supply voltage

1.5~3.6 (Note 2)

V

Input voltage (DIR, OE )

0~5.5

V

0~5.5

(Note 3)

Bus I/O voltage

V

(Note 5)

Output current

(Note 6)

mA

Operating temperature

°C

Input rise and fall time

dt/dv

0~10

(Note 7)

ns/V

Note 1: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs and

bus inputs must be tied to either VCC or GND. Please connect both bus inputs and the bus outputs with

VCC or GND when the I/O of the bus terminal changes by the function. In this case, please note that the

output is not short-circuited.

Note 2: Data retention only

Note 3: Output in off-state

Note 4: High or low state