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TAR8H06K Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TAR8H06K Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 8 page TAR8H06K 2007-11-01 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply Voltage VIN 12 V Output Current (A-channel) IOUT (A) 100 Output Current (B-channel) IOUT (B) 150 mA 200 (Note 1) Power Dissipation PD 400 (Note 2) mW Operation Temp. Range Topr −40 to 85 °C Storage Temp. Range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit Rating Note 2: Mounted on a glass epoxy circuit board of 30 × 30 mm Pad dimension of 70 mm 2 Electrical Characteristics (unless otherwise specified, VIN = 3.6 V, CIN = 1 μF, COUT = 10 μF, CNOISE = 0.01 μF, VCT = 3.6 V, Tj = 25°C) 1.5 V Output Characteristics (VOUT (A)) Characteristics Symbol Test Condition Min Typ. Max Unit Output Voltage VOUT (A) IOUT (A) = 30 mA 1.44 1.5 1.56 V Load Regulation Reg・load (A) IOUT (A) = 0 mA to 30 mA ⎯ 10 30 mV Line Regulation Reg・line (A) VIN = 4.0 V to 8.0 V ⎯ 1 20 mV Temp. Coefficient TCVO (A) Ta = −40°C to 85°C ⎯ 100 ⎯ ppm/ °C R.R.1 (A) VIN = 5.0 V, IOUT (A) = 10 mA, f = 200 Hz, VRipple = 1 Vp-p, Ta = 25°C ⎯ 65 ⎯ dB Ripple Rejection R.R.2 (A) VIN = 5.0 V, IOUT (A) = 10 mA, f = 200 kHz, VRipple = 1 Vp-p, Ta = 25°C ⎯ 50 ⎯ dB Output Noise Voltage VNO (A) IOUT (A) = 10 mA, 10 Hz <= f <= 10 kHz, Ta = 25°C ⎯ 30 ⎯ μVrms Output Rise Time trise (A) IOUT (A) = 30 mA, VCT = 0 V → 3 V (tr = 10 ns) ⎯ 1 ⎯ ms |
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