SSM6P28TU

2007-11-01

1

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

SSM6P28TU

High-Speed Switching Applications

Power Management Switch Applications

• 1.8V drive

• P-ch 2-in-1

• Low ON-resistance:

Characteristic

Symbol

Rating

Unit

Drain-source voltage

−20

V

Gate-source voltage

± 8

V

DC

−0.8

Drain current

Pulse

−1.6

A

Drain power dissipation

500

mW

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board

(total dissipation)

(25.4 mm

Characteristic

Symbol

Test Conditions

Min

Typ.

Max

Unit

− 20

⎯

⎯

Drain-source breakdown voltage

− 12

⎯

⎯

V

Drain cutoff current

⎯

⎯

− 10

μA

Gate leakage current

⎯

⎯

± 1

μA

Gate threshold voltage

− 0.3

⎯

− 1.0

V

Forward transfer admittance

(Note 2)

1.5

2.5

⎯

S

(Note 2)

⎯

175

234

(Note 2)

⎯

230

306

Drain-source ON-resistance

(Note 2)

⎯

300

460

m

Ω

Input capacitance

⎯

250

⎯

pF

Output capacitance

⎯

45

⎯

pF

Reverse transfer capacitance

⎯

35

⎯

pF

Turn-on time

⎯

12

⎯

Switching time

Turn-off time

⎯

18

⎯

ns

Drain-source forward voltage

(Note 2)

⎯

0.85

1.2

V

Note 2: Pulse test

Unit: mm

UFM

JEDEC

―

JEITA

―

TOSHIBA

2-2T1B

Weight: 7 mg (typ.)

6

1.7±0.1

2.1±0.1

1

2

3

5

4

1.Source1

2.Gate1

3.Drain2

4.Source2

5.Gate2

6.Drain1