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SSM6P28TU Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SSM6P28TU Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page SSM6P28TU 2007-11-01 1 TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P28TU High-Speed Switching Applications Power Management Switch Applications • 1.8V drive • P-ch 2-in-1 • Low ON-resistance: Ron = 460 mΩ (max) (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V) Ron = 234 mΩ (max) (@VGS = −4.0 V) Absolute Maximum Ratings (Ta = 25°C) (Q1 , Q2 Common) Characteristic Symbol Rating Unit Drain-source voltage VDS −20 V Gate-source voltage VGSS ± 8 V DC ID −0.8 Drain current Pulse IDP −1.6 A Drain power dissipation PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (total dissipation) (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) (Q1 , Q2 Common) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = − 1 mA, VGS = 0 − 20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = − 1 mA, VGS = + 8 V − 12 ⎯ ⎯ V Drain cutoff current IDSS VDS = − 20 V, VGS = 0 ⎯ ⎯ − 10 μA Gate leakage current IGSS VGS = ± 8 V, VDS = 0 ⎯ ⎯ ± 1 μA Gate threshold voltage Vth VDS = − 3 V, ID = − 1 mA − 0.3 ⎯ − 1.0 V Forward transfer admittance ⏐Yfs⏐ VDS = − 3 V, ID = − 0.6 A (Note 2) 1.5 2.5 ⎯ S ID = − 0.6 A, VGS = − 4.0 V (Note 2) ⎯ 175 234 ID = − 0.4 A, VGS = − 2.5 V (Note 2) ⎯ 230 306 Drain-source ON-resistance RDS (ON) ID = − 0.1 A, VGS = − 1.8 V (Note 2) ⎯ 300 460 m Ω Input capacitance Ciss VDS = − 10 V, VGS = 0, f = 1 MHz ⎯ 250 ⎯ pF Output capacitance Coss VDS = − 10 V, VGS = 0, f = 1 MHz ⎯ 45 ⎯ pF Reverse transfer capacitance Crss VDS = − 10 V, VGS = 0, f = 1 MHz ⎯ 35 ⎯ pF Turn-on time ton ⎯ 12 ⎯ Switching time Turn-off time toff VDD = − 10 V, ID = − 0.25 A, VGS = 0 to − 2.5 V, RG = 4.7 Ω ⎯ 18 ⎯ ns Drain-source forward voltage VDSF ID = 0.8 A, VGS = 0 V (Note 2) ⎯ 0.85 1.2 V Note 2: Pulse test Unit: mm UFM JEDEC ― JEITA ― TOSHIBA 2-2T1B Weight: 7 mg (typ.) 6 1.7±0.1 2.1±0.1 1 2 3 5 4 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 |
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