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©2007 Fairchild Semiconductor Corporation

FDMS8672AS Rev.B2

SyncFET Schottky Body Diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in parallel

with

PowerTrench

MOSFET.

This

diode

exhibits

similar

characteristics to a discrete external Schottky diode in parallel

with a MOSFET. Figure 14 shows the reverse recovery

characteristic of the FDMS8672AS.

Schottky barrier diodes exhibit significant leakage at high tem-

perature and high reverse voltage. This will increase the power

in the device.

0

5

10

15

20

25

30

0.001

0.01

0.1

1

10

V

DS

, REVERSE VOLTAGE (V)

Figure 14. FDMS8672AS SyncFET Body Diode

Reverse Recovery Characteristics

Figure 15. SyncFET Body Diode Reverse Leakage

vs Drain to Source Voltage

-30

-15

0

15

30

45

-4

-3

-2

-1

0

1

2

3

4

5

TIME (ns)