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CM600HU-12F Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # CM600HU-12F
Description  HIGH POWER SWITCHING USE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM600HU-12F Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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Aug. 1999
MITSUBISHI IGBT MODULES
CM600HU-12F
HIGH POWER SWITCHING USE
101
102
23
5
7
103
23
5
7
101
102
2
3
5
7
103
2
3
5
7
101
10–3
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 7
23 5 7
23 5 7
23 5 7
101
10–2
10–1
100
0
2
4
6
8
10
12
14
16
18
20
0
1000
2000
3000
4000
5000
1
10–5
10–4
10–3
10–3
7
5
3
2
10–2
7
5
3
2
10–1
3
2
23 5 7
23 5 7
Single Pulse
TC = 25
°C
Irr
trr
VCC = 200V
VCC = 300V
IC = 600A
Conditions:
VCC = 300V
VGE =
±15V
RG = 3.1
Ω
Tj = 25
°C
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE CHARGE QG (nC)
IGBT part:
Per unit base = Rth(j–c) = 0.088
°C/W
FWDi part:
Per unit base = Rth(j–c) = 0.12
°C/W


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