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SSM6K204FE Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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SSM6K204FE Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page SSM6K204FE 2007-11-01 4 Drain current ID (A) |Yfs| – ID 0.1 10 1 10 0.1 1 3 0.3 0.01 Common Source VDS = 3 V Ta = 25°C Drain–source voltage VDS (V) IDR – VDS 10 0 0.1 1 0.001 0.01 –0.2 –0.6 –0.4 –1.0 –0.8 −25 °C Ta =100 °C 25 °C –1.2 Drain–source voltage VDS (V) C – VDS 10 0.1 1 10 100 100 1000 300 500 30 50 Ciss Coss Crss Common Source Ta = 25°C f = 1 MHz VGS = 0 V Drain current ID (A) t – ID 1 0.01 100 0.1 1000 1 10 toff 10 tf ton tr Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7Ω Total Gate Charge Qg (nC) Dynamic Input Characteristic 0 0 VDD=10V 4 8 4 8 10 10 6 2 Common Source ID = 2.0 A Ta = 25°C VDD=16V 6 2 Common Source VGS = 0 V G D S IDR |
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