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SSM5P05FU Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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SSM5P05FU Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  SSM5P05FU 2007-11-01 2 Marking Equivalent Circuit (top view) Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±12 V, VDS = 0 ⎯ ⎯ ±1 μA Drain-Source breakdown voltage V (BR) DSS ID = −1 mA, VGS = 0 −20 ⎯ ⎯ V Drain cut-off current IDSS VDS = −20 V, VGS = 0 ⎯ ⎯ −1 μA Gate threshold voltage Vth VDS = −3 V, ID = −0.1 mA −0.6 ⎯ −1.1 V Forward transfer admittance ⎪Yfs⎪ VDS = −3 V, ID = −50 mA (Note2) 100 ⎯ ⎯ mS ID = −100 mA, VGS = −4 V (Note2) ⎯ 2.1 3.3 Drain-Source ON resistance RDS (ON) ID = −50 mA, VGS = −2.5 V (Note2) ⎯ 3.2 4.0 Ω Input capacitance Ciss ⎯ 27 ⎯ pF Reverse transfer capacitance Crss ⎯ 7 ⎯ pF Output capacitance Coss VDS = −3 V, VGS = 0, f = 1 MHz ⎯ 21 ⎯ pF Turn-on time ton ⎯ 70 ⎯ Switching time Turn-off time toff VDD = −3 V, ID = −50 mA, VGS = 0~−2.5 V ⎯ 70 ⎯ ns Note2: Pulse test Switching Time Test Circuit (Q1, Q2 Common) Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. D H 5 4 1 2 3 Q1 Q2 54 123 (c)VOUT VDD = −3 V Duty <= 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDD OUT IN 0 −2.5 V 10 μs RL (b) VIN ton 90% 10% −2.5 V 0 V 90% 10% toff tr tf VDS (ON) VDD (a) Test circuit |
Similar Part No. - SSM5P05FU_07 |
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Similar Description - SSM5P05FU_07 |
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