SSM5N05FU datasheet(2/5 Pages) TOSHIBA

Part #	SSM5N05FU

Description	High Speed Switching Applications

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

Logo

2 / 5 page

SSM5N05FU

2007-11-01

2

Marking

Equivalent Circuit (top view)

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±12 V, VDS = 0

⎯

±1

μA

Drain-Source breakdown voltage

V (BR) DSS

ID = 1 mA, VGS = 0

20

⎯

V

Drain cut-off current

IDSS

VDS = 20 V, VGS = 0

⎯

1

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.6

⎯

1.1

V

Forward transfer admittance

⎪Yfs⎪

VDS = 3 V, ID = 200 mA

(Note2)

350

⎯

mS

ID = 200 mA, VGS = 4 V

(Note2)

⎯

0.6

0.8

Drain-Source on-resistance

RDS (ON)

ID = 200 mA, VGS = 2.5 V (Note2)

⎯

0.85

1.2

Ω

Input capacitance

Ciss

⎯

22

⎯

pF

Reverse transfer capacitance

Crss

⎯

9

⎯

pF

Output capacitance

Coss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

21

⎯

pF

Turn-on time

ton

⎯

60

⎯

Switching time

Turn-off time

toff

VDD = 3 V, ID = 100 mA,

VGS = 0~2.5 V

⎯

70

⎯

ns

Note2: Pulse test

Switching Time Test Circuit

Precaution

Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA

for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires

a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on))

Please take this into consideration when using the device.

(c) VOUT

VDD = 3 V

Duty <= 1%

VIN: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

Ta

= 25°C

VDD

OUT

IN

2.5 V

0

10

μs

RL

(b) VIN

ton

90%

10%

0 V

2.5 V

10%

90%

toff

tr

tf

VDD

VDS (ON)

(a) Test circuit

D F

5

4

1

2

3

Q1

54

123

Q2

Similar Part No. - SSM5N05FU

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	SSM5N05FU	143Kb / 5P	TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

More results

Similar Description - SSM5N05FU

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	SSM6N37FE	197Kb / 5P	High-Speed Switching Applications Analog Switching Applications
	SSM6N44FE	154Kb / 5P	High Speed Switching Applications Analog Switching Applications
	SSM6N16FE	143Kb / 5P	High Speed Switching Applications Analog Switching Applications
	SSM3K16FU	137Kb / 5P	High Speed Switching Applications Analog Switching Applications
	2SK1062TE85LF	327Kb / 5P	High Speed Switching Applications
	SSM6L12TU	241Kb / 9P	High-Speed Switching Applications
	TPC6D03	205Kb / 7P	High-Speed Switching Applications
Sanyo Semicon Device	2SA1730	91Kb / 3P	High-Speed Switching Applications
	2SA1331	112Kb / 4P	High-Speed Switching Applications
	2SC4452	89Kb / 3P	High-Speed Switching Applications
	2SC4455	87Kb / 3P	High-Speed Switching Applications

More results

SSM5N05FU Datasheet(PDF) 2 Page - Toshiba Semiconductor

SSM5N05FU Datasheet(HTML) 2 Page - Toshiba Semiconductor

Similar Part No. - SSM5N05FU

Similar Description - SSM5N05FU

Html Pages

1 2 3 4 5

Datasheet Download

Link URL