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STS25NH3LL Datasheet(PDF) 1 Page - STMicroelectronics |
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STS25NH3LL Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 11 page November 2007 Rev 10 1/11 11 STS25NH3LL N-channel 30 V - 0.0032 Ω - 25 A - SO-8 STripFET™ III Power MOSFET for DC/DC conversion Features ■ Optimal RDS(on) x Qg trade off @ 4.5 V ■ Conduction losses reduced ■ Switching losses reduced Applications ■ Switching applications Description This device utilizes the advanced design rules of ST's proprietary STripFET™ technology. The innovative process coupled with unique metallization techniques makes it possible to produce the most advanced low voltage Power MOSFET in an SO-8 package. The device is therefore suitable for demanding DC-DC converter applications where high efficiency at high output current is needed. Figure 1. Internal schematic diagram Type VDSS RDS(on) ID STS25NH3LL 30 V <0.0035 Ω 25 A (1) 1. This value is rated according to Rthj-pcb SO-8 Table 1. Device summary Order code Marking Package Packaging STS25NH3LL 25H3LL SO-8 Tape & reel www.st.com |
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