SSM5H07TU datasheet(5/10 Pages) TOSHIBA | Silicon Epitaxial Schottky Barrier Diode DC-DC Converter

Part Name

Description

SSM5H07TU

Silicon Epitaxial Schottky Barrier Diode DC-DC Converter ( 10 Page)

TOSHIBA

5 page

SSM5H07TU

2007-11-01

MOS Electrical Characteristics Graph

Drain-Source Voltage VDS (V)

ID – VDS

0.4

0.8

1.2

1.6

1.5

0.5

6 V

2.5

3 V

Common Source

= 25°C

2.5 V

4 V

VGS = 10 V

Gate-Source Voltage VGS (V)

ID – VGS

100

0.0001

0.01

0.1

0.001

0.5

1.5

−25°C

Common Source

VDS = 5 V

= 100°C

25°C

3.5

2.5

4.5

Gate-Source Voltage VGS (V)

0.2

0.6

0.8

RDS (ON) – VGS

25°C

ID = 0.6 A

Common Source

0.4

= 100°C

−25°C

Drain Current ID (A)

RDS (ON) – ID

0.2

0.4

0.6

0.8

10 V

0.5

1.5

2.5

Common Source

= 25°C

VGS = 4 V

Ambient Temperature Ta (°C)

Vth – Ta

−25

150

0.4

0.8

1.6

100

125

1.2

Common Source

VDS = 5V

ID = 0.1mA

Ambient Temperature Ta (°C)

RDS (ON) – Ta

Common Source

ID = 0.6 A

−25

VGS = 4 V

150

0.2

0.4

0.6

0.8

100

10 V

125

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