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TLP371_07 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TLP371_07
Description  GaAs Ired & Photo−Transistor
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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 3 page
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TLP371,TLP372
2007-10-01
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
10
μA
Capacitance
CT
V = 0, f = 1 MHz
30
pF
Collector
−emitter
breakdown voltage
V(BR) CEO
IC = 0.1 mA
300
V
Emitter
−collector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
0.3
V
Collector
−base
breakdown voltage (TLP371)
V(BR) CBO
IC = 0.1 mA
300
V
Emitter
−base
breakdown voltage (TLP371)
V(BR) EBO
IE = 0.1 mA
7
V
VCE = 200 V
10
200
nA
Collector dark current
ICEO
VCE = 200 V
Ta = 85 °C
20
μA
Collector dark current (TLP371)
ICER
VCE = 200 V
Ta = 85 °C,
RBE = 10 MΩ
0.5
10
μA
Collector dark current (TLP371)
ICBO
VCE = 200 V
0.1
nA
DC forward current gain (TLP371)
hFE
VCE = 5 V,
IC = 10 mA
7000
Capacitance (collecter to emitter)
CCE
V = 0, f = 1 MHz
10
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
MIn
Typ.
Max
Unit
Current transfer ratio
IC / IF
IF = 1 mA, VCE = 1 V
1000
4000
%
Saturated CTR
IC / IF (sat)
IF = 10 mA, VCE = 1 V
500
%
Base photo
−current (TLP371)
IPB
IF = 1 mA, VCB = 1 V
6
μA
IC = 10 mA, IF = 1 mA
1.0
Collector
−emitter
saturation voltage
VCE (sat)
IC = 100 mA, IF = 10 mA
0.3
1.2
V




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