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TLP371_07 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TLP371_07
Description  GaAs Ired & Photo−Transistor
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP371,TLP372
2007-10-01
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP371, TLP372
Office Machine
Household Use Equipment
Telecommunication
Solid State Relay
Programmable Controllers
The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide
infrared emitting diode optically coupled to a darlington connected
photo−transistor which has an integrated base−emitter resistor to
optimize switching speed and elevated temperature characteristics in a
six lead plastic DIP package.
TLP372 is no−base internal connection for high−EMI environments.
• Current transfer ratio: 1000% (min) (IF = 1mA)
• Isolation voltage: 5000 Vrms (min)
• UL recognized: UL1577, file no. E67349
Pin Configurations (top view)
1
2
5
4
3
6
TLP371
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : Base
1
2
5
4
3
6
TLP372
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : NC
TOSHIBA
11
−7A8
Weight: 0.4g
Unit in mm




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