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SSM3K15FS Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # SSM3K15FS
Description  Silicon N Channel MOS Type High Speed Switching Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM3K15FS Datasheet(HTML) 2 Page - Toshiba Semiconductor

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SSM3K15FS
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0
±1
μA
Drain-Source breakdown voltage
V (BR) DSS
ID = 0.1 mA, VGS = 0
30
V
Drain Cut-off current
IDSS
VDS = 30 V, VGS = 0
1
μA
Gate threshold voltage
Vth
VDS = 3 V, ID = 0.1 mA
0.8
1.5
V
Forward transfer admittance
|Yfs|
VDS = 3 V, ID = 10 mA
25
mS
ID = 10 mA, VGS = 4 V
2.2
4.0
Drain-Source ON resistance
RDS (ON)
ID = 10 mA, VGS = 2.5 V
4.0
7.0
Ω
Input capacitance
Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
7.8
pF
Reverse transfer capacitance
Crss
VDS = 3 V, VGS = 0, f = 1 MHz
3.6
pF
Output capacitance
Coss
VDS = 3 V, VGS = 0, f = 1 MHz
8.8
pF
Turn-on time
ton
50
Switching time
Turn-off time
toff
VDD = 5 V, ID = 10 mA,
VGS = 0~5 V
180
ns
Switching Time Test Circuit
(a) Test circuit
(b) VIN
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires
lower voltage than Vth.
(relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
VDD = 5 V
D.U. <= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common source
Ta
= 25°C
VDD
OUT
IN
5 V
0
10
μs
RL
(c) VOUT
ton
90%
10%
0 V
5 V
10%
90%
toff
tr
tf
VDD
VDS (ON)


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