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SSM3K15FS Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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SSM3K15FS Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page SSM3K15FS 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA Drain-Source breakdown voltage V (BR) DSS ID = 0.1 mA, VGS = 0 30 ⎯ ⎯ V Drain Cut-off current IDSS VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.8 ⎯ 1.5 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 10 mA 25 ⎯ ⎯ mS ID = 10 mA, VGS = 4 V ⎯ 2.2 4.0 Drain-Source ON resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ⎯ 4.0 7.0 Ω Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 7.8 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 3.6 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 8.8 ⎯ pF Turn-on time ton ⎯ 50 ⎯ Switching time Turn-off time toff VDD = 5 V, ID = 10 mA, VGS = 0~5 V ⎯ 180 ⎯ ns Switching Time Test Circuit (a) Test circuit (b) VIN Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VDD = 5 V D.U. <= 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common source Ta = 25°C VDD OUT IN 5 V 0 10 μs RL (c) VOUT ton 90% 10% 0 V 5 V 10% 90% toff tr tf VDD VDS (ON) |
Similar Part No. - SSM3K15FS_07 |
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Similar Description - SSM3K15FS_07 |
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