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2SA1360 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA1360 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  2SA1360 2006-11-09 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −150 V, IE = 0 ― ― −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = −1 mA, IB = 0 −150 ― ― V DC current gain hFE (Note) VCE = −5 V, IC = −10 mA 80 ― 240 Collector-emitter saturation voltage VCE (sat) IC = −10 mA, IB = −1 mA ― ― −1.0 V Base-emitter voltage VBE VCE = −5 V, IC = −10 mA ― ― −0.8 V Transition frequency fT VCE = −5 V, IC = −10 mA ― 200 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 2.5 ― pF Note: hFE classification O: 80 to 160, Y: 120 to 240 Marking A1360 Part No. (or abbreviation code) Characteristics indicator Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. |
Similar Part No. - 2SA1360_07 |
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Similar Description - 2SA1360_07 |
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