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HN7G10FE Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # HN7G10FE
Description  Power Management Switch Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

HN7G10FE Datasheet(HTML) 3 Page - Toshiba Semiconductor

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HN7G10FE
2007-11-01
3
Q1 (Transistor)
IC – VBE
Collector-emitter voltage VCE (V)
IC – VCE
Base-emitter voltage VBE (V)
Collector current IC (mA)
VBE (sat) – IC
Collector-base voltage VCB (V)
Cob – VCB
Collector current IC (mA)
hFE – IC
Collector current IC (mA)
VCE (sat) – IC
50
0.1
3
500
10
1
0.3
30
Common emitter
IC/IB
= 20
Ta
= 25°C
30
10
0.1
5
3
1
0.5
0.3
100
300
0.0
1
0.8
0.4
1.2
Common emitter
VCE
= 2 V
Ta
= 100°C
25
−25
300
1000
1.6
500
30
100
50
3
10
5
IE
= 0 A
f
= 1 MHz
Ta
= 25°C
100
0.1
3
100
10
1
0.3
30
50
30
1
10
5
3
0
5
3
4
1
2
0
0.6
0.2
Common emitter
Ta
= 25°C
0.8
IB
= 0.5 mA
6
0.4
1.0
5
4
3
2
1
10000
0.1
3
1000
10
1
0.3
30
5000
3000
10
1000
500
300
100
50
30
100
300
Common emitter
VCE
= 2 V
Ta
= 100°C
25
−25
1000
0.1
3
1000
10
1
0.3
30
Common emitter
IC/IB
= 20
500
Ta
= 100°C
25
300
1
−25
100
50
30
10
5
3
100
300


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