HN4D02JU

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

HN4D02JU

Ultra High Speed Switching Applications

Low forward voltage

Small total capacitance

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

85

V

Reverse voltage

80

V

Maximum (peak) forward current

300*

mA

Average forward current

100*

mA

Surge current (10ms)

2*

A

Power dissipation

P

200**

mW

Junction temperature

150

°C

Storage temperature

−55∼150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

* : Unit rating; Total rating = unit rating × 1.5

** :Total rating

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.60

―

―

―

0.72

―

Forward voltage

―

―

0.90

1.20

V

―

―

―

0.1

Reverse current

―

―

―

0.5

μA

Total capacitance

―

―

0.9

―

pF

Reverse recovery time

―

―

1.6

―

ns

1 . AN O D E1

2. CATHO D E

3 . AN O D E2

4 . AN O D E3

5 . AN O D E4

JEDEC

―

JEITA

―

TOSHIBA

1-2V1C

Weight: 0.0062g (typ.)

Unit: mm